InAlN-barrier HFETs with GaN and InGaN channels
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چکیده
منابع مشابه
Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures
Grown lattice matched to GaN, InAlN-based heterojunction field effect transistors (HFETs) are promising due to the relatively large band discontinuity at the interface and lack of misfit strain. Despite the recent progress in the growth, there still exists some questions as to the true lattice matching condition of InAlN to GaN due to discrepancies in the value of the lattice parameters of the ...
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The high-field transport characteristics of nearly lattice-matched InAlN/GaN heterostructures with different barrier thickness were investigated. It is found that the current in the InAlN/GaN heterostructures with ultrathin barrier shows unsaturated behaviors (or secondary rising) at high voltage, which is different from that of AlGaN/GaN heterostructures. This phenomenon is more obvious if the...
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Several novel high-performance GaN-based devices have been recently proposed. InAlN/GaN high electron mobility transistors (HEMTs) provide higher polarization charges without the drawback of high strain and demonstrate maximum current capabilities surpassing those of AlGaN/GaN structures [1]. We shall discuss the models of the material system [2], implemented in our twodimensional device simula...
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تاریخ انتشار 2009